SI5441DC Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

Si5441DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1800
Capacitance
0.15
0.10
V_GS = 2.5 V
0.05
V_GS = 3.6 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 3.9 A
4
1500
C_iss
1200
900
600
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 3.9 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
I_D = 3.9 A
0.10
T_J = 25_C
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 71055
S-50366—Rev. C, 28-Feb-05
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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