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SI5441BDC Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET | |||
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New Product
Si5441BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
1200
Capacitance
0.14
0.12
0.10
1000
Ciss
800
0.08
0.06
VGS = 2.5 V
0.04
0.02
0.00
0
4
8
VGS = 3.6 V
VGS = 4.5 V
12
16
20
600
400
Coss
200
Crss
0
0
4
8
12
16
20
ID â Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 6.1 A
4
VDS â Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.1 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Qg â Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
TJ = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD â Source-to-Drain Voltage (V)
Document Number: 73207
S-42240âRev. A, 13-Dec-04
0.6
â50 â25 0
25 50 75 100 125 150
TJ â Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.12
0.10
0.08
ID = 6.1 A
0.06
0.04
0.02
0.00
0
1
2
3
4
5
VGS â Gate-to-Source Voltage (V)
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