SI5440DC Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si5440DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V_GS = 10 thru 4 V
25
10
T_C = - 55 °C
8
20
15
V_GS = 3 V
10
5
V_GS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
T_C = 25 °C
2
T_C = 125 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.024
1500
0.022
C_iss
1200
0.020
0.018
0.016
0.014
0.012
0
V_GS = 4.5 V
V_GS = 10 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
900
600
300
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 9.1 A
8
1.6
I_D = 9.1 A
1.4
V_DS = 15 V
6
V_DS = 24 V
1.2
V_GS = 10 V, 4.5 V
4
1.0
2
0.8
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69056
S-83037-Rev. A, 22-Dec-08
www.vishay.com
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