SI5424DC Datasheet, PDF (3/11 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
5
V_GS = 4 V
V_GS = 10 thru 5 V
4
30
3
20
V_GS = 3 V
2
10
0
0.0
0.04
V_GS = 2 V
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1
0
0.0
1500
Si5424DC
Vishay Siliconix
T_J = 25 °C
T_J = 125 °C
T_J = - 55 °C
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 6 A
8
6
V_DS = 15 V
V_DS = 24 V
4
2
0
0
6
12
18
24
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73776
S-83054-Rev. B, 29-Dec-08
1200
C_iss
900
600
300
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
V_GS = 10 V, I_D = 4.8 A
1.4
1.2
V_GS = 4.5 V,
I_D = 4.2 A
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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