SI5419DU-T1-GE3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
20
V_GS = 10 V thru 5 V
32
16
V_GS = 4 V
24
12
Si5419DU
Vishay Siliconix
16
8
0
0.0
0.10
V_GS = 2 V
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 9.9 A
8
6
V_DS = 15 V
4
V_DS = 24 V
8
T_C = 25 °C
4
T_C = 125 °C
0
T_C = - 55 °C
0
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2100
1800
C_iss
1500
1200
900
600
C_oss
300
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 6.6 A
1.4
1.2
V_GS = 10 V
V_GS = 4.5 V
1.0
2
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69001
S11-0184-Rev. B, 07-Feb-11
www.vishay.com
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