SI5402BDC_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si5402BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
Capacitance
800
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
700
C_iss
600
500
400
300
0.01
200
C_oss
100
C_rss
0.00
0
4
8
12
16
20
0
0
5
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 4.9 A
8
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 4.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 4.9 A
T_J = 25_C
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD − Source-to-Drain Voltage (V)
Document Number: 73051
S-41495—Rev. A, 09-Jun-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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