SI4980DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 80-V (D-S) MOSFET

Si4980DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
Transfer Characteristics
24
V_GS = 10 thru 6 V
18
5V
12
6
0
0
0.20
4V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
24
18
12
T_C = 125_C
6
25_C
- 55_C
0
0
1
2
3
4
5
6
7
1200
V_GS - Gate-to-Source Voltage (V)
Capacitance
0.16
0.12
0.08
0.04
V_GS = 6 V
V_GS = 10 V
0.00
0
10
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
V_DS = 40 V
8
I_D = 3.7 A
6
900
C_iss
600
300
C_oss
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
1.6
I_D = 3.7 A
1.2
4
0.8
2
0.4
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
Document Number: 70646
S-03950—Rev. D, 26-May-03
www.vishay.com
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