SI4943DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si4943DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
3000
Capacitance
0.04
0.03
V_GS = 4.5 V
0.02
V_GS = 10 V
0.01
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 10 V
I_D = 8.4 A
8
2500
C_iss
2000
1500
1000
500
0
0
C_rss
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 8.4 A
1.4
6
1.2
4
1.0
2
0.8
0
0
8
16
24
32
40
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
I_D = 8.4 A
0.03
0.02
0.01
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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