SI4940DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

New Product
Si4940DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
600
Capacitance
0.08
0.06
V_GS = 4.5 V
0.04
0.02
V_GS = 10 V
500
400
300
200
100
C_rss
C_iss
C_oss
0.00
0
5
10
15
20
25
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 20 V
I_D = 5.7 A
8
0
0
8
16
24
32
40
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 5.7 A
1.6
6
1.2
4
0.8
2
0.4
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
0.0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
I_D = 3 A
0.06
I_D = 5.7 A
T_J = 25_C
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71649
S-04277—Rev. B, 16-Jul-01
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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