SI4922BDY-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
2.0
32
V_GS = 10 V thru 3 V
1.6
24
1.2
Si4922BDY
Vishay Siliconix
T_J = 125 °C
T_J = 25 °C
16
2V
8
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
0.8
0.4
T_J = - 55 °C
0.0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
0.026
0.022
V_GS = 2.5 V
0.018
V_GS = 4.5 V
0.014
V_GS = 10 V
0.010
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
6
V_DS = 10 V
V_DS = 15 V
4
V_DS = 20 V
2
2400
C_iss
1800
1200
600
C_oss
0 ^Crss
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 5 A
1.5
1.3
V_GS = 4.5 V
V_GS = 10 V
1.1
0.9
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74459
S09-0704-Rev. B, 27-Apr-09
www.vishay.com
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