SI4896DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 80-V (D-S) MOSFET

Si4896DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
3000
Capacitance
0.03
0.02
0.01
V_GS = 6 V
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
20
V_DS = 40 V
I_D = 10 A
16
2500
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
20
40
60
80
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 10 A
2.0
12
1.5
8
1.0
4
0.5
0
0
15
30
45
60
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.08
0.06
I_D = 10 A
1
0.04
T_J = 25_C
0.1
0.02
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71300
S-03950—Rev. B, 26-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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