SI4864DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si4864DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
On-Resistance vs. Drain Current
7500
Capacitance
0.004
0.003
V_GS = 2.5 V
V_GS = 4.5 V
6000
C_iss
4500
0.002
0.001
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 25 A
3000
1500
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 25 A
3
1.2
2
1.0
1
0.8
0
0
12
24
36
48
60
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
0.004
I_D = 25 A
0.002
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71449
S-03662—Rev. B, 14-Apr-03
0.000
012345678
V_GS - Gate-to-Source Voltage (V)
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