SI4848DY-T1-GE3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.15
1200
Si4848DY
Vishay Siliconix
0.12
0.09
0.06
V_GS = 6 V
V_GS = 10 V
0.03
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
20
V_DS = 75 V
I_D = 3.5 A
16
12
8
4
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
50
C_iss
900
600
300
C_rss
C_oss
0
0
30
60
90
120
150
V_DS - Drain-to-Source Voltage (V)
Capacitance
3.0
V_GS = 10 V
I_D = 3.5 A
2.5
2.0
1.5
1.0
0.5
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
T_J = 150 °C
T_J = 25 °C
10
0.20
0.15
0.10
I_D = 3.5 A
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71356
S09-0870-Rev. C, 18-May-09
www.vishay.com
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