SI4840DY-T1-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

Si4840DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
3000
0.016
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
0.004
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2500
C_iss
2000
1500
1000
500
C_rss
C_oss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 20 V
I_D = 14 A
8
2.0
V_GS = 10 V
I_D = 14 A
1.6
6
1.2
4
0.8
2
0.4
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
50
T_J = 150 °C
10
0.0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.04
I_D = 14 A
0.03
0.02
T_J = 25 °C
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71188
S09-0869-Rev. E, 18-May-09
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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