SI4838DY-T1 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.005
7500
Si4838DY
Vishay Siliconix
0.004
0.003
0.002
V_GS = 2.5 V
V_GS = 4.5 V
0.001
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 6 V
I_D = 25 A
4
6000
C_iss
4500
3000
C_oss
1500
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 25 A
1.4
3
1.2
2
1.0
1
0.8
0
0
60
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.015
T_J = 150 °C
10
T_J = 25 °C
0.012
0.009
0.006
0.003
I_D = 25 A
1
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71359
S09-0221-Rev. D, 09-Feb-09
www.vishay.com
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