SI4835DDY Datasheet, PDF (3/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
5
V_GS = 10 V thru 5 V
50
4
40
3
30
V_GS = 4 V
2
20
10
V_GS = 3 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.05
1
0
0
3000
Si4835DDY
Vishay Siliconix
V_GS = 125 °C
V_GS = 25 °C
V_GS = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.04
0.03
V_GS = 4.5 V
2400
C_iss
1800
0.02
0.01
V_GS = 10 V
0.00
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
1200
600
C_rss
C_oss
0
0
1.6
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
I_D = 10 A
1.4
V_GS = - 10 V
1.2
V_GS = - 4.5 V
1.0
2
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69953
S09-0136-Rev. B, 02-Feb-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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