SI4800BDY Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
V_GS = 10 thru 5 V
4V
35
30
25
20
3V
15
10
5
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
40
T_C = - 55 °C
35
25 °C
30
25
125 °C
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
0.032
0.024
0.016
V_GS = 4.5 V
V_GS = 10 V
0.008
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1000
C_iss
800
600
400
200
0
0
C_rss
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
V_DS = 15 V
5
I_D = 9 A
1.8
V_GS = 10 V
1.6
I_D = 9 A
4
1.4
3
1.2
2
1.0
1
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
www.vishay.com
3