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SI4750DY Datasheet, PDF (3/8 Pages) Vishay Siliconix – Smart Power High-Side Switch
New Product
Si4750DY
Vishay Siliconix
SPECIFICATIONS
Parameter
Symbol
Load Switching Capabilities and Characteristics
Test Conditions
Unless Otherwise Noted
TA = 25_C, Vbb =14.5 V
Min Typ Max Unit
On-State Resistance
Nominal Load Current
Turn-On- Time to 90% VOUT
Turn-Off Time to 10% VOUT
Slew Rate On
Slew Rate Off
Operating Parameters
rON
IL(nom)
tON
toff
dV/dton
−dV/dton
IL = 2 A, Vbb = 9 to 14.5 V
IL = 2 A, CL = 2 mA
34
50
mW
2
A
70
150
ms
60
150
0.22
V/ms
0.08
Operating Voltage
Undervoltage Shutdown of Charge Pump
Undervoltage Restart of Charge Pump
Standby Current
Leakage Output Current (Included in Ibb(off))
Protection Features
Vbb(on)
Vbb(under)
Vbb(ucp)
Ibb(off)
IL(off)
TA = −40 to 85_C
TA = −40 to 85_C, VIN = 0 V
VIN = 0 V
9
41
6.7
8
V
7.1
8
70
mA
0.5
Initial Peak Short Circuit Current Limit
Thermal Overload Trip Temperature
Thermal Hysteresis
Reverse Battery
Reverse Batteryb
Drain-Source Diode Voltage
Input
IL(SCp)
TJ
THYS
−Vbb
−VON
tm = 500 ms, TA = 25_C
tm = 500 ms, TA = 25_C
IL = 2 A
VOUT > Vbb, TJ = 150_C
21
A
19
150
_C
12
25
V
600
mV
Input Turn-On Threshold Voltage
Input Turn-Off Threshold Voltage
Input Threshold Hysteresis
Off-State Input Current
On-State Input Current
Input Resistance
VIN(T+)
VIN(T−)
DVIN(T)
IIN(off)
IIN(on)
RL
See Figure 1
VIN = 0.7 V, See Figure 1
VIN = 5 V, See Figure 1
Input Resistance, See Figure 1
2.3
3.0
0.8
V
1
2
mA
2
3000
kW
Notes
a. Not to exceed TPULSE = 50 ns.
b. Requires a 150-W resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Pow-
er dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not
active during reverse current operation. Input current has to be limited. (See Maximum Ratings, page 2.)
http://www.campw.com/
Document Number: 72219
S-32411—Rev. B, 24-Nov-03
www.vishay.com
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