SI4654DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
2.0
V_GS = 10 V thru 4 V
56
1.6
Si4654DY
Vishay Siliconix
42
1.2
T_C = 25 °C
28
0.8
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0050
0.0046
0.4
T_C = 125 °C
T_C = - 55 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
4600
C_iss
3680
0.0042
0.0038
V_GS = 4.5 V
2760
1840
0.0034
V_GS = 10 V
0.0030
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
920
C_oss
C_rss
0
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 15 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
2
0.8
0
0
13
26
39
52
65
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69813
S09-0138-Rev. C, 02-Feb-09
www.vishay.com
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