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SI4539ADY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET
Si4539ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 10 thru 5 V
4V
24
24
NCHANNEL
Transfer Characteristics
TC = - 55_C
25_C
18
12
3V
6
2V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.08
18
12
6
0
0
1000
125_C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Capacitance
0.06
0.04
0.02
VGS = 4.5 V
VGS = 10 V
0.00
0
6
12
18
24
30
ID - Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 5.9 A
8
800
Ciss
600
400
200
Crss
Coss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 5.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
Document Number: 71131
S-03951—Rev. B, 26-May-03
www.vishay.com
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