SI4497DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
V_GS = 10 V thru 4 V
56
V_GS = 3 V
8
Si4497DY
Vishay Siliconix
42
6
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0045
0.0040
0.0035
V_GS = 4.5 V
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
12 000
C_iss
9600
7200
0.0030
0.0025
V_GS = 10 V
0.0020
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 20 A
8
V_DS = 15 V
6
V_DS = 10 V
V_DS = 20 V
4
4800
2400
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 20 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
2
0.8
0
0
40
80
120
160
200
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65748
S10-0639-Rev. A, 22-Mar-10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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