SI4493DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
Si4493DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance vs. Drain Current
9000
Capacitance
0.012
0.009
V_GS = 2.5 V
0.006
V_GS = 4.5 V
0.003
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 14 A
4
7200
C_iss
5400
3600
C_oss
1800
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 14 A
1.4
3
1.2
2
1.0
1
0.8
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
I_D = 14 A
0.012
1
T_J = 25_C
0.006
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72256
S-31420—Rev. A, 07-Jul-03
0.000
0
1
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
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