SI4487DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SPICE Device Model Si4487DY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA T_J = 25 °C, unless otherwise noted
50
10
V_GS = 10 V, 7 V, 6 V, 5 V
T_J = 125 °C
40
8
30
V_GS = 4 V
6
20
4
10
0
0.0
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
2
T_J = 25 °C
T_J = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
0.080
0.064
0.048
0.032
V_GS = 4.5 V
0.016
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
1700
1360
C_iss
1020
680
340
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 20 V
4
2
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Note
Dots and squares represent measured data.
Document Number: 65550
S09-2452-Rev. A, 23-Nov-09
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
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