SI4484EY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si4484EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
2500
Capacitance
0.04
0.03
0.02
V_GS = 6.0 V
V_GS = 10 V
2000
C_iss
1500
1000
0.01
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 50 V
I_D = 6.9 A
8
500
C_rss
C_oss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.4
V_GS = 10 V
I_D = 6.9 A
2.0
6
1.6
4
1.2
2
0.8
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 175_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71189
S-03951—Rev. C, 26-May-03
0.4
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
I_D = 6.9 A
0.04
0.03
0.02
0.01
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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