SI4477DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

SPICE Device Model Si4477DY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA T_J = 25 °C, unless otherwise noted
60
1.5
V_GS = 5 V, 3.5 V, 3 V, 2.5 V
T_J = 125 °C
1.2
45
T_J = - 55 °C
0.9
30
V_GS = 2 V
0.6
15
T_J = 25 °C
0.3
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
0.016
0.012
0.008
V_GS = 2.5 V
0.004
V_GS = 4.5 V
0.000
0
15
30
45
60
I_D - Drain Current (A)
6000
C_iss
5000
4000
3000
2000
C_oss
1000
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
6
I_D = 18 A
4
V_DS = 10 V
V_DS = 15 V
2
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Note
Dots and squares represent measured data.
Document Number: 65215
S09-1763-Rev. A, 14-Sep-09
100
T_J = 150 °C
T_J = 25 °C
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
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3