SI4473DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 14-V (D-S) MOSFET

Si4473DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
8000
Capacitance
0.024
0.018
0.012
0.006
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
10
20
30
40
50
I_D − Drain Current (A)
Gate Charge
10
V_DS = 10 V
I_D = 13 A
8
6400
C_iss
4800
3200
1600
0
0
C_oss
C_rss
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 13 A
1.4
6
1.2
4
1.0
2
0.8
0
0
20
40
60
80
100
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
I_D = 13 A
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 71613
S-50154—Rev. C, 31-Jan-05
0.00
0
2
4
6
8
V_GS − Gate-to-Source Voltage (V)
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