SI4451DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
Si4451DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
9000
Capacitance
0.020
0.015
0.010
V_GS = 1.8 V
V_GS = 2.5 V
0.005
V_GS = 4.5 V
0.000
0
8
16
24
32
40
I_D - Drain Current (A)
6
V_DS = 6 V
5
I_D = 14 A
Gate Charge
4
3
2
1
0
0
21
42
63
84
105
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
7200
C_iss
5400
3600
1800
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.3
V_GS = 4.5 V
I_D = 14 A
1.2
1.1
1.0
0.9
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.040
0.032
0.024
I_D = 14 A
0.016
1
T_J = 25_C
0.008
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72115
S-03160—Rev. A, 17-Feb-03
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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