SI4446DY Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 40-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
V_GS = 10 V thru 3 V
16
16
Si4446DY
Vishay Siliconix
12
12
8
2V
4
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.050
0.045
0.040
0.035
0.030
V_GS = 4.5 V
V_GS = 10 V
0.025
0.020
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
I_D = 5.2 A
5
V_DS = 10 V
4
3
V_DS = 20 V
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
8
T_C = 125
4
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
1000
800
C_iss
600
400
200
C_oss
C_rss
0
0 5 10 15 20 25 30 35 40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V
1.6
I_D = 5.2 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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