SI4442DY Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4442DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
6000
0.008
0.006
0.004
V_GS = 2.5 V
V_GS = 4.5 V
0.002
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5000
C_iss
4000
3000
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 15 V
8
I_D = 22 A
6
4
1.8
1.6
V_GS = 4.5 V
I_D = 22 A
1.4
1.2
1.0
2
0.8
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
60
0.020
T_J = 150 °C
10
T_J = 25 °C
0.016
0.012
0.008
0.004
I_D = 22 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71358
S09-0228-Rev. E, 09-Feb-09
www.vishay.com
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