SI4435DDY Datasheet, PDF (3/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
1.0
V_GS = 10 V thru 5 V
40
0.8
V_GS = 4 V
30
0.6
Si4435DDY
Vishay Siliconix
T_C = - 55 °C
20
10
0
0.0
0.05
V_GS = 3 V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.4
T_C = 25 °C
0.2
T_C = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
0.04
0.03
V_GS = 4.5 V
0.02
V_GS = 10 V
0.01
0
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 9.1 A
8
V_DS = 15 V
6
V_DS = 7.5 V
4
V_DS = 22.5 V
2
0
0
9
18
27
36
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68841
S09-0863-Rev. C, 18-May-09
1800
C_iss
1200
600
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 9.1 A
1.5
V_GS = 10 V
1.2
0.9
V_GS = 4.5 V
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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