SI4435BDY-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.040
2400
0.035
0.030
0.025
V_GS = 4.5 V
1800
C_iss
0.020
0.015
V_GS = 10 V
1200
0.010
0.005
600
C_rss
C_oss
0.000
0
10
20
30
40
50
0
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 15 V
I_D = 9.1 A
8
1.6
V_GS = 10 V
I_D = 9.1 A
1.4
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
Q_g - Total Gate Charge (nC)
Gate Charge
50
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
T_J = 150 °C
10
T_J = 25 °C
0.08
0.06
I_D = 9.1 A
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72123
S09-0767-Rev. D, 04-May-09
www.vishay.com
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