SI4431ADY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4431ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
2000
0.08
1600
Capacitance
C_iss
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 7.2 A
8
1200
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 7.2 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9 12 15 18 21 24
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
I_D = 7.2 A
0.10
T_J = 25_C
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71803
S-95713—Rev. C, 18-Feb-02
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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