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SI4418DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET
New Product
Si4418DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1600
Capacitance
0.16
0.12
0.08
VGS = 6.0 V
VGS = 10 V
1400
1200
Ciss
1000
800
600
0.04
400
Crss
200
Coss
0.00
0
2
4
6
8
10
12
0
0 10 20 30 40 50 60 70 80
ID − Drain Current (A)
Gate Charge
10
VDS = 100 V
ID = 3 A
8
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 3 A
2.0
6
1.5
4
1.0
2
0.5
0
0
4
8
12
16
20
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.0
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
ID = 3 A
0.12
TJ = 25_C
0.08
0.04
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 72513
S-32412—Rev. B, 24-Nov-03
0.00
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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