SI4204DY Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 20 V MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
V_GS = 10 V thru 3 V
40
8
Si4204DY
Vishay Siliconix
30
6
20
10
V_GS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0060
0.0054
0.0048
V_GS = 4.5 V
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2500
C_iss
2000
1500
0.0042
0.0036
V_GS = 10 V
0.0030
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 15 V
2
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
1000
C_oss
500
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65154
S10-1042-Rev. A, 03-May-10
www.vishay.com
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