SI4136DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
10
V_GS = 10 thru 3 V
56
8
Si4136DY
Vishay Siliconix
42
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0030
0.0026
6
T_C = 25 °C
4
T_C = 125 °C
2
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6000
C_iss
4800
0.0022
0.0018
V_GS = 4.5 V
0.0014
V_GS = 10 V
0.0010
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 15 V
2
0
0
15
30
45
60
75
Q_g - Total Gate Charge (nC)
Gate Charge
3600
2400
C_oss
1200
C_rss
0
0.0
2.4
4.8
7.2
9.6
12.0
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 15 A
1.6
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64718
S09-0139-Rev. A, 02-Feb-09
www.vishay.com
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