SI2316BDS-T1-GE3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
3
V_GS = 10 V thru 5 V
15
2
10
V_GS = 4 V
1
5
0
0
0.20
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
500
Si2316BDS
Vishay Siliconix
T_J = 25 °C
T_J = 125 °C
1
2
T_J = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.16
V_GS = 4.5 V
0.12
0.08
0.04
V_GS = 10 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 3.9 A
8
6
V_DS = 16 V
4
V_DS = 24 V
2
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
400
300
C_iss
200
C_oss
100
0
C_rss
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V, I _D = 3.9 A
1.6
1.4
1.2
V_GS = 4.5 V, I_D = 3.3 A
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
www.vishay.com
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