SI1917EDH_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si1917EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
3.0
3.0
V_GS = 5 thru 3 V
2.5
2.5 V
2.5
2.0
2.0
1.5
2V
1.5
Transfer Characteristics
T_C = –55_C
25_C
125_C
1.0
1.0
0.5
1.5 V
0.5
0.0
0
1.2
0.9
0.6
0.3
1
2
3
4
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
200
160
C_iss
120
80
40
C_rss
C_oss
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I_D – Drain Current (A)
Gate Charge
5
V_DS = 6 V
4
I_D = –1.0 A
0
0
2
4
6
8
10
12
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = –1.0 A
3
1.2
2
1.0
1
0.8
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Q_g – Total Gate Charge (nC)
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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