SI1450DH_08 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless noted
15
12
V_GS = 5 thru 2 V
9
V_GS = 1.5 V
6
3
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS – Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
V_GS = 1.5 V
0.06
0.04
0.02
V_GS = 1.5 V
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D – Drain Current (A)
r_DS(on) vs. Drain Current
5
I_D = 4.4 A
4
V_DS = 4 V
V_GS = 6.4 V
3
2
1
0
0
2
3
5
6
Q_g – Total Gate Charge (nC)
Gate Charge
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
Si1450DH
Vishay Siliconix
3
2
T_C = 125 °C
1
T_C = 25 °C
T_C = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V_GS – Gate-to-Source Voltage (V)
Transfer Characteristics
800
600
C_iss
400
200
C_oss
C_rss
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 4.6 A
1.4
V_GS = 2.5 V, I_D = 4.4 A
1.2
V_GS = 1.8 V, I_D = 4.25 A
V_GS = 1.5 V
1.0
I_D = 1.2 A
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3