SI1034X Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si1034X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS NOTED)
On-Resistance vs. Drain Current
40
100
80
30
60
20
40
V_GS = 1.8 V
10
V_GS = 2.5 V
20
Capacitance
V_GS = 0 V
f = 1 MHz
C_iss
C_oss
V_GS = 4.5 V
0
0
50
100
150
200
250
0 ^Crss
0
4
8
12
16
20
I_D – Drain Current (mA)
V_DS – Drain-to-Source Voltage (V)
Gate Charge
5
V_DS = 10 V
I_D = 150 mA
4
3
2
On-Resistance vs. Junction Temperature
1.60
1.40
1.20
1.00
V_GS = 4.5 V
I_D = 200 mA
V_GS = 1.8 V
I_D = 175 mA
1
0.80
0
0.0
0.2
0.4
0.6
0.8
Q_g – Total Gate Charge (nC)
1000
Source-Drain Diode Forward Voltage
T_J = 125_C
100
T_J = 25_C
0.60
–50 –25 0
25 50 75 100 125
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
50
I_D = 200 mA
40
I_D = 175 mA
30
10
T_J = 50_C
20
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Document Number: 71427
S-03201—Rev. A, 12-Mar-01
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
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