SE30PAB Datasheet, PDF (3/5 Pages) Vishay Siliconix – Ideal for automated placement

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SE30PAB, SE30PAD, SE30PAG, SE30PAJ
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
3.5
Rth_J-M = 9 °C/W
3
2.5
2
1.5 ^{Free air, RthJA = 120 oC/W}
1
0.5
T_M measured at cathode band
terminal PCB mount
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 125 °C
1
0.1
T_J = 75 °C
0.01
T_J = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
4.0
3.6
D = 0.8
D = 0.5
3.2
D = 0.3
2.8
D = 0.2
D = 1.0
2.4
D = 0.1
2.0
1.6
1.2
T
0.8
0.4
D = t_p/T
t_p
0.0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10
T_J = 175 °C
T_J = 150 °C
1
T_J = 125 °C
T_J =75 °C
T_J = 25 °C
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 04-Nov-16
3
Document Number: 87702
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