SD200NR Datasheet, PDF (3/7 Pages) Vishay Siliconix – Standard Recovery Diodes (Stud Version), 200 A

SD200N/R Series
Standard Recovery Diodes _{Vishay High Power Products}
(Stud Version), 200 A
ΔR_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS
UNITS
180°
0.041
0.030
120°
0.049
0.051
90°
0.063
60°
0.093
0.068
0.096
T_J = T_J maximum
K/W
30°
0.156
0.157
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
180
SD200N/ RSeries
170
R_thJC (DC) = 0.23 K/ W
160
150
Conduction Angle
140
130
120
110
100
0
60° ^90° 120°
30°
180°
40 80 120 160 200 240
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
180
SD200N/ RSeries
170
R_thJC (DC) = 0.23 K/ W
160
150
140
Conduction Period
130
120
110
100
90
0
90°
60° 120°
30°
180° _DC
50 100 150 200 250 300 350
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
300
180°
120°
250
90°
60°
200
30°
RMS Limit
150
100
Conduction Angle
0.04.3K/KW/W
0.6 _K/W
0.8 _K/W
1.4 _K/W
50
SD200N/R Series
1.8 _K/W
Tj = Tj max
0
0 50 100 150 200 250 40 60 80 100 120 140 160 180
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Document Number: 93541
Revision: 17-Apr-08
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