SBL25L20CT Datasheet, PDF (3/5 Pages) General Semiconductor – LOW VF SCHOTTKY RECTIFIER

SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
100
T_J = 150 °C
10
T_J = 125 °C
T_J = 100 °C
1
T_J = 25 °C
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1000
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
1
0.1
T_J = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88731 For technical questions within your region, please contact one of the following:
Revision: 08-Apr-08
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