SBL1030CT Datasheet, PDF (3/5 Pages) Diodes Incorporated – 10A SCHOTTKY BARRIER RECTIFIER

SBL(F,B)1030CT & SBL(F,B)1040CT
Vishay General Semiconductor
100
T_J = 125 °C
10
T_J = 25 °C
1
0.1
0.01
0
Pulse Width = 300 µs
1 % Duty Cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
T_J = 125 °C
1
T_J = 75 °C
0.1
0.01
T_J = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88726 For technical questions within your region, please contact one of the following:
Revision: 25-Apr-08
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