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PB5006 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Enhanced PowerBridge Rectifiers
New Product
PB5006 thru PB5010
Vishay General Semiconductor
120
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40 45 50 55
Average Forward Current (A)
Figure 3. Forward Power Dissipation
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
TA = 85 °C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
1000
TA = 150 °C
100
10
TA = 125 °C
TA = 100 °C
TA = 85 °C
1
0.1
TA = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 84809 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000