MBRF735-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Schottky Barrier Rectifier

100
10
T_J = 125 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
T_J = 25 °C
0.1
0.01
0
MBR735 - MBR745
MBR750 & MBR760
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
MBR735 - MBR745
MBR750 & MBR760
10
1
T_J = 125 °C
0.1
0.01
T_J = 75 °C
0.001
0
T_J = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
MBR(F,B)735 thru MBR(F,B)760
Vishay General Semiconductor
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
MBR735 - MBR745
MBR750 & MBR760
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
Document Number: 88680 For technical questions within your region, please contact one of the following:
Revision: 08-Nov-07
[e-mail], [e-mail], [e-mail]
www.vishay.com
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