MBR20H200CT_07 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
100
TJ = 175 °C
10
TJ = 125 °C
1
TJ = 75 °C
TJ = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10000
1000
100
10
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
1
TJ = 25 °C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
MBRF
1
MBR, MBRB
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88786
Revision: 27-Jul-07
www.vishay.com
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