MBR1090CT_10 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common-Cathode High Voltage Schottky Rectifier

New Product
MBR1090CT, MBR10100CT
Vishay General Semiconductor
4.0
D = 0.8
3.5
D = 0.5
D = 0.3
3.0
D = 0.2
D = 1.0
2.5
D = 0.1
2.0
1.5
T
1.0
0.5
0
0
D = t_p/T
t_p
1
2
3
4
5
6
Average Forward Current (A)
Figure 3. Forward Power Loss Characteristics Per Diode
100
T_A = 150 °C
10 T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1 MHz
V_sig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
10
Junction to Case
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 89125 For technical questions within your region, please contact one of the following:
Revision: 26-Apr-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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