MB3035S Datasheet, PDF (3/6 Pages) Vishay Siliconix – Schottky Barrier Rectifier

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100
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
0
Pulse Width = 300 µs
1 % Duty Cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
T_J = 150 °C
10
T_J = 125 °C
1
0.1
0.01
T_J = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
M(B,I)3035S, M(B,I)3045S
Vishay General Semiconductor
10
Junction to Case
1
0.1
0.01
M(I)30xxS
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
0.1
0.01
MB30xxS
0.1
1
10
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 15-Oct-12
3
Document Number: 88952
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