M3060C Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common-Cathode Schottky Rectifier

New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
100
T_J = 150 °C
10
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1000
100
T_J = 150 °C
10
T_J = 125 °C
1
0.1
0.01
T_J = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1000
100
Junction to Case
10
M(I)3060C
1
0.1
0.01
0.1
1
10
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
100
10
MF3060C
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance Per Diode
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 89009 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
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www.vishay.com
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