M10HXXCT_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common Cathode High Voltage Schottky Rectifier

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100
T_J = 175 °C
10
T_J = 150 °C
1
T_J = 125 °C
T_J = 100 °C
0.1
T_J = 25 °C
0.01
T_J = - 40 °C
0.1
0.3
0.5
0.7
0.9
1.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
10 000
1000 TJ = 150 °C
100
10
T_J = 125 °C
T_J = 100 °C
1
0.1
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
M10HxxCT, MF10HxxCT
Vishay General Semiconductor
100
Junction to Case
10
1
0.1
0.01
0.1
1
t - Pulse Duration (s)
M
10
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
Junction to Case
10
1
0.1
0.01
MF
0.1
1
10
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance Per Diode

100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 22-Jan-15
3
Document Number: 87728
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